Advances in 200 mm 4H SiC Wafer Development and Production

High-current Ion Implanter for 300-mm SIMOX Wafer Production

OVERVIEW: There is an increased demand for the production of nextgeneration super-high-speed and low-power-consumption CMOS (complementary metal-oxide semiconductor) devices using SOI (silicon on insulator). Major global device manufacturers are actively commercializing this product. In SOI technology, a device is fabricated in a silicon layer (SOI layer) formed on a BOX (buried oxide) film. Al...

Annealing of multivacancy defects in 4H-SiC

The annealing behavior of defects observed in electron paramagnetic resonance EPR and photoluminescence PL is discussed. We consider the divacancy the P6/P7 EPR centers and a previously unreported EPR center that we suggest is a VC-VSi-VC trivacancy and their relationship with each other and with the UD1–3 series of PL lines near 1 eV. We observe that the divacancy and the UD2 PL lines annealin...

CVD growth of 3C-SiC on 4H-SiC substrate

The hetero epitaxial growth of 3C-SiC on nominally on-axis 4H-SiC is reported. A horizontal hot-wall CVD reactor working at low pressure is used to perform the growth experiments in a temperature range of 1200-1500 °C with the standard chemistry using silane and propane as precursors carried by a mix of hydrogen and argon. The optimal temperature for single-domain growth is found to be about 13...

Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H–SiC

Electronic structure and charge transfer in 3C- and 4H-SiC

We utilized a local density functional potential, the linear combination of atomic orbital (LCAO) method, and the BZW procedure to study the electronic structure of 3Cand 4H-SiC. We present the calculated energy bands, band-gaps, effective masses of n-type carriers, and critical point transition energies. There is good agreement between the calculated electronic properties and experimental resu...